In Figure 2c, by assuming that the incoming heat energy is positive and the outgoing heat energy is negative, we have (8) Taking into account a system of linear equations for the node (i, j) composed of Equations 2, 7, and 8, the temperature at any mesh node can be obtained. Finally, by substituting the above obtained current density in any mesh segment and temperature at any mesh node into Equation 4, the temperature distribution in any mesh segment can be monitored. A synopsis of the corresponding

computational algorithm [27] is provided as below. Initially, a small value is assigned to the input current I. Cell Cycle inhibitor The corresponding maximum temperature in the mesh T max can be identified, which rises with the increasing I. By gradually increasing I with increment ΔI

to make T max reach T m, the first mesh segment melts and breaks from an arbitrary small force occurring in actual operation (e.g., vibration). At that time, the input current and the voltage between node (0, 0) and node (9, 0) are recorded as melting current Copanlisib molecular weight I m and melting voltage V m. The corresponding resistance R m of the mesh can be calculated by dividing V m by I m. It should be noted that ΔI must be small enough so that melting segment can melt one by one as far as possible. Subsequently, an ultra-small value is assigned to the cross-sectional area of the first melted mesh segment in order to approximate zero. The pathway of the current and heat in the mesh is therefore renewed. By repeating the aforementioned process, the current triggering the melting of mesh segment one by one can be obtained until the mesh becomes open. Therefore, the relationship between I m and V m as well as the variation of R m with the number n b of the broken mesh segments can be obtained Thiamine-diphosphate kinase over the entire melting process of the mesh. Results and discussion

Melting behavior of the Ag microwire mesh As shown in Figure 3a,b, the obtained relationship of melting current I m and melting voltage V m as well as the variation of mesh resistance R m with the number n b of broken mesh segments during the entire melting process of the Ag microwire mesh is compared with those of the corresponding Ag nanowire mesh, respectively. Figure 3 Comparison of melting process for both meshes. (a) The relationship between I m and V m, and (b) the variation of R m with n b . Obviously, a repetitive zigzag pattern is observed in the relationship of I m and V m in the Ag microwire mesh, which demonstrates the repetition of three different trends: increase of both I m and V m, decrease of both I m and V m, and decrease of I m but increase of V m. Such pattern in the melting behavior of Ag microwire mesh is similar with that of the corresponding Ag nanowire mesh [27].